IPG20N06S4L-26 数据手册
其他文档
B78308-A2387-A003 20 pages
技术规格
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPG20N06S4L-26
- Power Dissipation (Pd): 33W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@10uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,17A
- Package: TDSON-8-4
- Manufacturer: Infineon Technologies
- Part id: 1422265